tsd1858 low vcesat npn transistor 1/4 version: e11 t o - 251 (ipak) product summary bv cbo 180v bv ceo 160v i c 1.5a v ce(sat) 0.3v @ i c = 1a, i b = 100ma features low v ce(sat) 0.15 @ i c = 1a, i b = 100ma (typ.) high bv ceo ordering information part no. package packing tsd1858ch c5g to-251 75pcs / tube note: g denote for halogen free product structure epitaxial planar type npn silicon transistor absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 5 v collector current dc i c 1.5 a pulse 3 (note1) power dissipation @ t a =25 o c p d 1 w power dissipation @ t c =25 o c p d 15 w thermal resistance - junction to case r ? jc 125 o c/w thermal resistance - junction to ambient r ? ja 8.33 o c/w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: 1. single pulse, pw 380us, duty 2% electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = 1ma, i e = 0 bv cbo 180 -- -- v collector-emitter breakdown voltage i c = 10ma, i b = 0 bv ceo 160 -- -- v emitter-base breakdown voltage i e = 50ua, i c = 0 bv ebo 5 -- -- v collector cutoff current v cb = 160v, i e = 0 i cbo -- -- 1 ua emitter cutoff current v eb = 4v, i c = 0 i ebo -- -- 1 ua collector-emitter saturation voltage i c = 1a, i b = 100ma v ce(sat) -- 0.15 0.3 v base-emitter saturation voltage v ce = 5v, i c = 5ma v b e( on ) -- -- 0.8 v dc current transfer ratio v ce = 5v, i c = 200ma h fe 1 180 -- 390 v ce = 5v, i c = 500ma h fe 2 30 -- -- transition frequency v ce =5v, i e =150ma, f=100mhz f t -- 200 -- mhz output capacitance v cb = 10v, f=1mhz cob -- 13 -- pf note: pulse test: pulse width 380us, duty cycle 2% pin definition : 1. base 2. collector 3. emitter
tsd1858 low vcesat npn transistor 2/4 version: e11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. dc current gain (v ce =5v, t a =25c) figure 2. v ce(sat) vs. collector current (i c /i b =10, t a =25c) figure 3. v be(sat) vs. collector current (i c /i b =10, t a =25c) figure 4. cib vs. v ce (f=1mhz, t a =25c) figure 5. frequency vs. emitter current (v ce =5v, t a =25c) figure 6. cob vs. v cb (f=1mhz, t a =25c)
tsd1858 low vcesat npn transistor 3/4 version: e11 to-251 mechanical drawing unit: millimeters marking diagram y = year code m = month code for h alogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsd1858 low vcesat npn transistor 4/4 version: e11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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